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| HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6119 Issued Date : 1992.11.25 Revised Date : 2001.07.19 Page No. : 1/4 HE8551S PNP EPITAXIAL PLANAR TRANSISTOR Description The HE8551S is designed for general purpose amplifier applications. Features * High DC Current gain: 100-400 at IC=150mA * Complementary to HE8051S Absolute Maximum Ratings * Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 C Junction Temperature ................................................................................... +150 C Maximum * Maximum Power Dissipation Total Power Dissipation (Ta=25C) ............................................................................... 625 mW * Maximum Voltages and Currents (Ta=25C) VCBO Collector to Base Voltage ....................................................................................... -25 V VCEO Collector to Emitter Voltage .................................................................................... -20 V VEBO Emitter to Base Voltage ............................................................................................ -5 V IC Collector Current ..................................................................................................... -700 mA Characteristics (Ta=25C) Symbol BVCBO BVCEO BVEBO ICBO *VCE(sat) VBE(on) *hFE1 *hFE2 fT Cob Min. -25 -20 -5 100 150 Typ. 100 Max. -1 -0.5 -1 500 10 Unit V V V uA V V Test Conditions IC=-10uA, IE=0 IC=-1mA, IB=0 IE=-10uA, IC=0 VCB=-20V, IE=0 IC=-0.5A, IB=-50mA VCE=-1V, IC=-150mA VCE=-1V, IC=-150mA VCE=-1V, IC=-500mA VCE=-10V, IC=-20mA, f=100MHz VCB=-10V, f=1MHz, IE=0 *Pulse Test : Pulse Width 380us, Duty Cycle2% MHz PF Classification Of hFE Rank hFE1 hFE2 C 100-180 C1 100-180 >100 D 160-300 D1 160-300 >100 E 250-500 - HE8551S HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collecto Current 1000 1000 Spec. No. : HE6119 Issued Date : 1992.11.25 Revised Date : 2001.07.19 Page No. : 2/4 Saturation Voltage & Collector Current hFE @ VCE=1V 100 Saturation Voltage (mV) 100 hFE VCE(sat) @ IC=10IB 10 10 1 0.1 1 10 100 1000 10000 1 0.1 1 10 100 1000 10000 Collector Current (mA) Collector Current (mA) On Voltage & Collector Current 10000 100 Capacitance & Reverse-Biased Voltage Capacitance (pF) On Voltage (mV) Cob 10 1000 VBE(on) @ VCE=1V 100 1 10 100 1000 10000 1 0.1 1 10 100 Collector Current (mA) Reverse-Biased Voltage (V) Cutoff Frequency & Collector Current 1000 10000 PT=1ms Safe Operating Area VCE=10V Collector Current-IC (mA) Cutoff Frequency (MHz) 1000 PT=100ms PT=1s 100 100 10 10 1 10 100 1000 1 1 10 100 Collector Current (mA) Forward Voltage-VCE (V) HE8551S HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6119 Issued Date : 1992.11.25 Revised Date : 2001.07.19 Page No. : 3/4 PD-Ta 700 600 Power Dissipation-PD(mW) 500 400 300 200 100 0 0 20 40 60 80 100 o 120 140 160 Ambient Temperature-Ta( C) HE8551S HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. TO-92 Dimension A B 12 3 Spec. No. : HE6119 Issued Date : 1992.11.25 Revised Date : 2001.07.19 Page No. : 4/4 2 Marking : HSMC Logo Part Number Date Code Rank Product Series 3 Laser Mark HSMC Logo Product Series C D Part Number H I E F G Ink Mark Style : Pin 1.Emitter 2.Base 3.Collector 1 3-Lead TO-92 Plastic Package HSMC Package Code : A *:Typical DIM A B C D E F Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480 Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76 DIM G H I 1 2 3 Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500 *5 *2 *2 Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 *5 *2 *2 Notes : 1.Dimension and tolerance based on our Spec. dated Apr. 25,1996. 2.Controlling dimension : millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office. Material : * Lead : 42 Alloy ; solder plating * Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory : * Head Office (Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454 * Factory 1 : No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel : 886-3-5983621~5 Fax : 886-3-5982931 HE8551S HSMC Product Specification |
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